Structural analysis of a quantum Bragg mirror detector (QBMD) by means of HRXRD

This study explores the growth quality of a far-infrared asymmetric GaAs/Al0.15Ga0.85As quantum Bragg mirror detector (QBMD) targeting an optical absorption of 111 meV. The sample was grown by molecular beam epitaxy (MBE) and characterized through high-resolution x-ray diffraction (HRXRD) to evaluate the influence of structural disorder on the HRXRD spectrum. Experimental HRXRD results were compared with simulated diffraction spectra, revealing that, despite thickness fluctuations of up to two monolayers in the quantum wells and barriers of the active region, the growth quality of the QBMD was excellent. By considering the “worst-case scenario”—in which all the layers are increased or decreased by exactly two monolayers—the impact on the optical transition is less than 5%.

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Publication Details

Journal
Journal of Integrated Circuits and Systems
Published
2025-05-22
DOI
https://doi.org/10.29292/jics.v20i1.936
Primary Topic
Spectroscopy and Laser Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Structural analysis of a quantum Bragg mirror detector (QBMD) by means of HRXRD

Germano Maioli Penello, Pedro Henrique Pereira, Sérgio L. Morelhão, A. A. Quivy et al.
Journal of Integrated Circuits and Systems
Spectroscopy and Laser Applications
article

Structural analysis of a quantum Bragg mirror detector (QBMD) by means of HRXRD

Germano Maioli Penello, Pedro Henrique Pereira, Sérgio L. Morelhão, A. A. Quivy, Rudy M. S. Kawabata, Guilherme Monteiro Torelly, Lucas Andrade Teixeira de Souza
article en

Abstract

This study explores the growth quality of a far-infrared asymmetric GaAs/Al0.15Ga0.85As quantum Bragg mirror detector (QBMD) targeting an optical absorption of 111 meV. The sample was grown by molecular beam epitaxy (MBE) and characterized through high-resolution x-ray diffraction (HRXRD) to evaluate the influence of structural disorder on the HRXRD spectrum. Experimental HRXRD results were compared with simulated diffraction spectra, revealing that, despite thickness fluctuations of up to two monolayers in the quantum wells and barriers of the active region, the growth quality of the QBMD was excellent. By considering the “worst-case scenario”—in which all the layers are increased or decreased by exactly two monolayers—the impact on the optical transition is less than 5%.

Journal of Integrated Circuits and SystemsVol. 20(1)
Universidade de São Paulo (BR), Pontifícia Universidade Católica do Rio de Janeiro (BR), Universidade do Estado do Rio de Janeiro (BR), Universidade Federal do Estado do Rio de Janeiro (BR)
Fundação de Amparo à Pesquisa do Estado de São Paulo, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro
Openalex Percentile: Top 88%
Spectroscopy and Laser Applications
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