Performance of InAlN‐GaN HEMT with BGaN Back Barrier for Ku Band Low‐Noise Amplifiers (LNA)

This study presents the design and optimization of a low-noise amplifier (LNA) using a 10 nm T-gate high electron mobility transistor (HEMT) based on AlGaN-GaN technology for Ku-band (12-18 GHz) applications. Our approach incorporates a strategic BGaN back barrier into the AlGaN-GaN HEMT structure to improve carrier confinement and channel control. The T-gate architecture - featuring a 10 nm gate length with extended cap width - addresses gate resistance challenges while maintaining superior carrier transport characteristics. TCAD Silvaco simulations demonstrate exceptional performance metrics; including a maximum drain current of 1.16 A and a transconductance of 760 mS/mm. High frequency performance exceeds expectations with a cutoff frequency (fT) of 8 THz and a maximum oscillation frequency (fMAX) of 20 THz. The device exhibits a maximum noise figure (NFMax) of 36 dB, H21 of 25 dB and gain (GT) of 42 dB over the entire Ku band. Layout considerations emphasize source-drain spacing optimization, precise gate alignment and thermal management paths critical for space applications. This LNA-HEMT configuration represents an optimal balance between high frequency performance and power efficiency, making it particularly suitable for space communications systems where reliability, sensitivity and power consumption are paramount. The research advances next-generation space communications technology through innovative LNA design while maintaining compatibility with established III-V semiconductor manufacturing processes.