Analysis and Extraction of Electrically Effective Channel Length in the Subthreshold Operation of Junctionless Nanowire FETs

In this work, the electrical length of Junctionless Nanowire Transistors operating in the subthreshold condition is analyzed. This work proposes an analytical model for the lat-eral depletion towards source/drain regions, which is validated using numerical simulations. Devices with different physical characteristics operating at different temperatures were con-sidered in validation. Besides that, a method for the effective channel length extraction based on the influence of short-chan-nel effects on the subthreshold slope is also presented, validated with the simulations, and applied to experimental devices.