Interlayer coupling of valley and layer in the homostructure bilayer ScI<sub>2</sub>
Despite transformative progress in valleytronic manipulation <i>via</i> heterostructure engineering, the valley-layer coupling mechanisms in homostructure two-dimensional (2D) systems remain a fundamental challenge. Here, we construct a homostructure bilayer ScI<sub>2</sub> and find that it exhibits both ferroelectricity and ferrovalley properties, with its valley polarization tunable <i>via</i> interlayer sliding symmetry. Interlayer sliding from AB to AC stacking requires only 14.7 meV energy, yet drives an appreciable 114 meV valley polarization alongside robust out-of-plane ferroelectric polarization reaching 3 × 10<sup>-11</sup> C m<sup>-1</sup>. Specially, the Curie temperature of bilayer ScI<sub>2</sub> reaches up to 615 K, making it favorable for applications at room temperature. Also, the valley-layer interplay in the ScI<sub>2</sub> homostructure drives a layer-locked anomalous Hall effect with electrically switchable polarization. The coupled valley and layer degrees of freedom in ScI<sub>2</sub> bilayers establish a sliding symmetry-protected mechanism for valley polarization materials in homostructures.
Authors
- Xiao-Jing Dong (ORCID: https://orcid.org/0000-0002-2564-1897)
- Changwen Zhang (ORCID: https://orcid.org/0000-0002-9667-8785)
Institutions
- University of Jinan (CN)
Publication Details
- Journal
- Physical Chemistry Chemical Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cp01131k
- Citations
- 1
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.52