Interlayer coupling of valley and layer in the homostructure bilayer ScI<sub>2</sub>

Despite transformative progress in valleytronic manipulation <i>via</i> heterostructure engineering, the valley-layer coupling mechanisms in homostructure two-dimensional (2D) systems remain a fundamental challenge. Here, we construct a homostructure bilayer ScI<sub>2</sub> and find that it exhibits both ferroelectricity and ferrovalley properties, with its valley polarization tunable <i>via</i> interlayer sliding symmetry. Interlayer sliding from AB to AC stacking requires only 14.7 meV energy, yet drives an appreciable 114 meV valley polarization alongside robust out-of-plane ferroelectric polarization reaching 3 × 10<sup>-11</sup> C m<sup>-1</sup>. Specially, the Curie temperature of bilayer ScI<sub>2</sub> reaches up to 615 K, making it favorable for applications at room temperature. Also, the valley-layer interplay in the ScI<sub>2</sub> homostructure drives a layer-locked anomalous Hall effect with electrically switchable polarization. The coupled valley and layer degrees of freedom in ScI<sub>2</sub> bilayers establish a sliding symmetry-protected mechanism for valley polarization materials in homostructures.

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Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp01131k
Citations
1
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.52
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article

Interlayer coupling of valley and layer in the homostructure bilayer ScI2

Xiao-Jing Dong, Changwen Zhang
1 citations
Physical Chemistry Chemical Physics
Electronic and Structural Properties of Oxides
0.52
article

Interlayer coupling of valley and layer in the homostructure bilayer ScI2

Xiao-Jing Dong, Changwen Zhang
article en
1 citations

Abstract

Despite transformative progress in valleytronic manipulation <i>via</i> heterostructure engineering, the valley-layer coupling mechanisms in homostructure two-dimensional (2D) systems remain a fundamental challenge. Here, we construct a homostructure bilayer ScI<sub>2</sub> and find that it exhibits both ferroelectricity and ferrovalley properties, with its valley polarization tunable <i>via</i> interlayer sliding symmetry. Interlayer sliding from AB to AC stacking requires only 14.7 meV energy, yet drives an appreciable 114 meV valley polarization alongside robust out-of-plane ferroelectric polarization reaching 3 × 10<sup>-11</sup> C m<sup>-1</sup>. Specially, the Curie temperature of bilayer ScI<sub>2</sub> reaches up to 615 K, making it favorable for applications at room temperature. Also, the valley-layer interplay in the ScI<sub>2</sub> homostructure drives a layer-locked anomalous Hall effect with electrically switchable polarization. The coupled valley and layer degrees of freedom in ScI<sub>2</sub> bilayers establish a sliding symmetry-protected mechanism for valley polarization materials in homostructures.

Physical Chemistry Chemical PhysicsVol. 27(25)
University of Jinan (CN)
Sustainable cities and communities
Openalex Percentile: Top 38%
Electronic and Structural Properties of Oxides
0.52
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Interlayer coupling of valley and layer in the homostructure bilayer ScI<sub>2</sub> — Xiao-Jing Dong, Changwen Zhang · Physical Chemistry Chemical Physics (2025) | TGRS Research Map | TGRS