Highly UV-responsive indium-free Zn–Sn–Al–O phototransistor for optoelectronic artificial synapses
Indium-free Zn–Sn–Al–O phototransistors demonstrate exceptional UV responsiveness and effectively mimic synaptic plasticity, accurately replicating experiential learning behaviors, advancing sustainable optoelectronic synaptic systems.
Authors
- Xuefeng Wu (ORCID: https://orcid.org/0000-0002-9672-6804)
- David W. Zhang (ORCID: https://orcid.org/0000-0002-2137-1738)
- Qingqing Sun (ORCID: https://orcid.org/0000-0001-5529-6433)
- Shen Hu (ORCID: https://orcid.org/0000-0001-8162-1519)
- Jiyuan Zhu (ORCID: https://orcid.org/0009-0007-9603-9004)
- Shice Wei (ORCID: https://orcid.org/0000-0003-3372-2424)
- Xin Zhang (ORCID: https://orcid.org/0000-0002-2492-369X)
- Bojia Chen (ORCID: https://orcid.org/0009-0009-3501-7762)
- Ji Li (ORCID: https://orcid.org/0000-0002-2004-230X)
Institutions
- Fudan University (CN)
- Shanghai Innovative Research Center of Traditional Chinese Medicine (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01255d
- Citations
- 1
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- National Natural Science Foundation of China