Integrated High‐Q Fabry‐Pérot Cavity at 780 nm with Ultrabroad Operating Bandwidth and High Fabrication Tolerance

Abstract Fabry‐Pérot (F‐P) cavities are highly desirable for atom cooling and narrow‐linewidth generation. However, there are few studies on integrated F‐P cavities with high‐quality factors in the visible and near‐visible wavelength ranges, particularly at 780 nm, which corresponds to the energy transition of rubidium atoms. In this work, an integrated F‐P cavity design based on silicon nitride is demonstrated achieving an intrinsic quality factor of 6.1 × 10 5 at 780 nm without thermal annealing, along with a broad operating bandwidth of 500 nm and high fabrication tolerance. To the best of the knowledge, this quality factor represents the highest reported value in these wavelength ranges, accompanied by the largest operating bandwidth. These results offer significant potential for advancing on‐chip atom cooling and contribute to the broader development of photonic integrated circuits and quantum optics.

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Publication Details

Journal
Laser & Photonics Review
Published
2025-06-09
DOI
https://doi.org/10.1002/lpor.202500796
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73

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Integrated High‐Q Fabry‐Pérot Cavity at 780 nm with Ultrabroad Operating Bandwidth and High Fabrication Tolerance

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article

Integrated High‐Q Fabry‐Pérot Cavity at 780 nm with Ultrabroad Operating Bandwidth and High Fabrication Tolerance

Xucheng Zhang, Yadong Jiao, Yikai Su, Xingchen Ji, Ce Chen, Chunxue Wang, Mingkun Xiao, Shuhuai Bai, Zhibo Cheng, Congyu Hu
article en
1 citations

Abstract

Abstract Fabry‐Pérot (F‐P) cavities are highly desirable for atom cooling and narrow‐linewidth generation. However, there are few studies on integrated F‐P cavities with high‐quality factors in the visible and near‐visible wavelength ranges, particularly at 780 nm, which corresponds to the energy transition of rubidium atoms. In this work, an integrated F‐P cavity design based on silicon nitride is demonstrated achieving an intrinsic quality factor of 6.1 × 10 5 at 780 nm without thermal annealing, along with a broad operating bandwidth of 500 nm and high fabrication tolerance. To the best of the knowledge, this quality factor represents the highest reported value in these wavelength ranges, accompanied by the largest operating bandwidth. These results offer significant potential for advancing on‐chip atom cooling and contribute to the broader development of photonic integrated circuits and quantum optics.

Laser & Photonics ReviewVol. 19(20)
Shanghai Jiao Tong University (CN), Shanghai Science and Technology Museum (CN), Hefei University (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Key Technologies Research and Development Program
Openalex Percentile: Top 27%
Photonic and Optical Devices
0.73
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