High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift

We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent π phase shift (π-EPS). The π-EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm ± 0.1 nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.

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Publication Details

Journal
IEEE Journal of Quantum Electronics
Published
2025-06-09
DOI
https://doi.org/10.1109/jqe.2025.3577557
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
1.46

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article

High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift

Xiangfei Chen, Yuncai Wang, Yuechun Shi, Ziming Hong et al.
2 citations
IEEE Journal of Quantum Electronics
Semiconductor Lasers and Optical Devices
1.46
article

High-Power Multi-Wavelength Laser Array With Uniform Spacing Based on Asymmetric Equivalent π Phase Shift

Xiangfei Chen, Yuncai Wang, Yuechun Shi, Ziming Hong, Zhenxing Sun, Lianping Hou, Xin Wang, Pu Li, Zhenzhen Xu, Cheng Peng, Yong Zhao, Yuxin Ma
article en
2 citations

Abstract

We experimentally demonstrated a high-power 16-wavelength DFB laser array with 1.6 nm (200 GHz) channel spacing based on the asymmetric equivalent π phase shift (π-EPS). The π-EPS is positioned at 1/5 of the laser cavity length near the facet with a high-reflection (HR) coating, enhancing the yield of single longitudinal mode (SLM) operation. The measured channel spacing is 1.6 nm ± 0.1 nm at a bias current of 250 mA. The array’s output power exceeds 120 mW for each channel at 400 mA. The SLM performance is achieved, with side mode suppression ratios (SMSRs) greater than 50 dB at room temperature. Furthermore, at 70 mA bias current, the relative intensity noise (RIN) remains below -160 dB/Hz. These results suggest that this laser array holds significant potential for large-scale silicon photonics applications. Therefore, the proposed laser array will be beneficial to the applications of large-scale silicon photonics.

IEEE Journal of Quantum ElectronicsVol. 61(4)
Guangdong University of Technology (CN), Chinese Academy of Sciences (CN), Photonic Science (United Kingdom) (GB), Collaborative Innovation Center of Advanced Microstructures (CN), Institute of Semiconductors (CN), National Laboratory of Solid State Microstructures, University of Glasgow (GB), Nanjing University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 17%
Semiconductor Lasers and Optical Devices
1.46
DOIOpen Access PDFOpenAlex
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