Temperature Dependence of Single-Event Burnout Across Varying LET Levels

This study investigates the influence of temperature on single-event burnout (SEB) in n-channel 115-V-rated vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) subjected to irradiation by heavy ions of krypton and tantalum. The experiments spanned a temperature range from 250C to 2000C, and it is indicated that a marked reduction in SEB sensitivity as the temperature increased. Our analysis methodically examines the interplay among the parasitic bipolar junction transistor (BJT) feedback mechanism, avalanche multiplication, charge collection, and SEB triggering processes. We propose a hypothesis that elevated temperatures decrease carrier mobility, reduce carrier lifetime, and diminish the impact ionization rate, which collectively leads to a reduction in charge collection and attenuates the lateral base current, thereby lowering SEB sensitivity. This hypothesis was substantiated through technology computer-aided design (TCAD) simulations. The findings reveal a consistent pattern in the temperature’s effect on SEB across all linear energy transfer (LET) levels examined, providing essential insights for the utilization of power VDMOS transistors in high-temperature, intense-radiation environments such as those encountered in space applications.