Numerical Optimization of Metamaterial-Enhanced Infrared Emitters for Ultra-Low Power Consumption

This study addresses the challenges of high-power consumption and complexity in conventional infrared (IR) gas sensors by integrating metamaterials and gold coatings into IR radiation sources to reduce radiation loss. In addition, emitter design optimization and material selection were employed to minimize conduction loss. Our metasurface exhibited superior performance, achieving a narrower full width at half maximum at 4197 and 3950 nm, resulting in more confined emission spectral ranges. This focused emission reduced energy waste at unnecessary wavelengths, improving efficiency compared to traditional blackbody emitters. At 300 °C, the device consumed only 6.8 mW, while maintaining temperature uniformity and a fast response time. This enhancement is promising for the operation of such sensors in IoT networks with ultra-low power consumption and at suitably low costs for widespread demands in high-technology farming.

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Publication Details

Journal
Photonics
Published
2025-06-07
DOI
https://doi.org/10.3390/photonics12060583
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
2.52

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article

Numerical Optimization of Metamaterial-Enhanced Infrared Emitters for Ultra-Low Power Consumption

Bui Xuan Khuyen, Pham Duy Tan, YoungPak Lee, Do Khanh Tung et al.
2 citations
Photonics
GaN-based semiconductor devices and materials
2.52
article

Numerical Optimization of Metamaterial-Enhanced Infrared Emitters for Ultra-Low Power Consumption

Bui Xuan Khuyen, Pham Duy Tan, YoungPak Lee, Do Khanh Tung, Nguyen Phon Hai, Nguyễn Thanh Tùng, Hai Anh Nguyen, Bui Son Tung, Liang‐Yao Chen, Vũ Đình Lãm, Ho Truong Giang, Nguyen Phuc Vinh, Pham Dinh Tuan, Do Xuan Phong
article en
2 citations

Abstract

This study addresses the challenges of high-power consumption and complexity in conventional infrared (IR) gas sensors by integrating metamaterials and gold coatings into IR radiation sources to reduce radiation loss. In addition, emitter design optimization and material selection were employed to minimize conduction loss. Our metasurface exhibited superior performance, achieving a narrower full width at half maximum at 4197 and 3950 nm, resulting in more confined emission spectral ranges. This focused emission reduced energy waste at unnecessary wavelengths, improving efficiency compared to traditional blackbody emitters. At 300 °C, the device consumed only 6.8 mW, while maintaining temperature uniformity and a fast response time. This enhancement is promising for the operation of such sensors in IoT networks with ultra-low power consumption and at suitably low costs for widespread demands in high-technology farming.

PhotonicsVol. 12(6)
Fudan University (CN), Hanyang University (KR), VNU University of Science (VN), Vietnam Academy of Science and Technology (VN), Hanoi University of Science and Technology (VN)
Science and Technology Commission of Shanghai Municipality
Openalex Percentile: Top 11%
GaN-based semiconductor devices and materials
2.52
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