Development of low-GWP gases for TSV process using digital twin

Abstract We have developed a low-GWP alternative gas to c-C 4 F 8 for use in the Bosch process, specifically targeting the through silicon via (TSV) process in the three-dimensional (3D) integration of semiconductor devices. Through virtual experiments utilizing digital twins, we found that CH 2 =CF 2 gas exhibited lower environmental impact (GWP < 1), higher deposition rates (DR), and enhanced etching resistance compared to c-C 4 F 8 . We also investigated the deposition mechanism of CH 2 =CF 2 by examining the plasma state.