Mg and native defects in cubic silicon carbide from first principles

Abstract The diffusion of Mg defects in 3C-SiC is studied using the density functional theory. Mg has the highest burn-in rate as a transmutant in 3C-SiC when it is placed in high-energy neutron irradiation environment of a fusion reactor. The presence and evolution of transmutant defects impact thermal and mechanical properties of this important structural material. This study is focused on understanding the structure, stability, and evolution of Mg defects and the interaction of Mg with native defects in 3C-SiC. Our calculations of diffusion coefficients for different Mg defects suggest that Mg is likely to diffuse faster in pristine 3C-SiC than in the damaged one, in agreement with earlier experimental observations.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2025-06-09
DOI
https://doi.org/10.1088/1361-6463/ade263
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Mg and native defects in cubic silicon carbide from first principles

Izabela Szlufarska, Dane Morgan, Rafi Ullah
Journal of Physics D Applied Physics
Silicon Carbide Semiconductor Technologies
article

Mg and native defects in cubic silicon carbide from first principles

Izabela Szlufarska, Dane Morgan, Rafi Ullah
article en

Abstract

Abstract The diffusion of Mg defects in 3C-SiC is studied using the density functional theory. Mg has the highest burn-in rate as a transmutant in 3C-SiC when it is placed in high-energy neutron irradiation environment of a fusion reactor. The presence and evolution of transmutant defects impact thermal and mechanical properties of this important structural material. This study is focused on understanding the structure, stability, and evolution of Mg defects and the interaction of Mg with native defects in 3C-SiC. Our calculations of diffusion coefficients for different Mg defects suggest that Mg is likely to diffuse faster in pristine 3C-SiC than in the damaged one, in agreement with earlier experimental observations.

Journal of Physics D Applied PhysicsVol. 58(26)
University of Wisconsin–Madison (US)
U.S. Department of Energy
Openalex Percentile: Top 89%
Silicon Carbide Semiconductor Technologies
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Mg and native defects in cubic silicon carbide from first principles — Izabela Szlufarska, Dane Morgan, et al. · Journal of Physics D Applied Physics (2025) | TGRS Research Map | TGRS