Lewis based-Cs4PbBr6/EP with excellent radiation shielding properties achieved by the trade-off between electron density and electron binding energy

Ionizing radiation in space causes various damage to electronic devices in spacecraft and thus affects the normal conduct of space exploration missions. Therefore, it is urgent to develop radiation shielding materials with excellent radiation shielding properties to improve the anti-radiation ability of electronic devices. In this work, Lewis base-modified perovskite as a functional filler was prepared using the ligand-assisted reprecipitation method, and the influence of electron transferring induced by the modification with Lewis bases on the radiation shielding properties of materials was investigated. For the TAA-Cs 4 PbBr 6 /EP composite material, the XPS results show that the binding energy of the Pb 4f 5/2 orbital electrons after TAA modification decreases from 143.1 eV to 142.8 eV. The theoretical calculation results show that the valence electron density of Pb modified by TAA has increased by 0.0167. Under the trade-off of the two effects of reduced electron binding energy and increased electron density, the radiation shielding efficiency of the material increased from 43.2 % to 46.4 %. The radiation resistance of the encapsulated MOSFET was investigated. TAA-MOS shows a lower threshold voltage offset of 1.55 V than that of the CPB-MOS (2.29 V) and Bare-MOS (3.36 V), indicating that the radiation shielding properties of TAA-Cs 4 PbBr 6 /EP have been significantly improved after modification. This study provides a new strategy for developing high-efficiency radiation shielding materials. • Lewis bases are employed to regulate the electronic structure of Cs 4 PbBr 6 . • The electron transferring increases the electron density and decreases the electron binding energy of the Pb atom. • The radiation shielding property of Cs 4 PbBr 6 is enhanced by the trade-off between electron density and binding energy. • The radiation resistance of MOSFET is significantly improved by packaging with Lewis based-Cs 4 PbBr 6 /EP.

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Publication Details

Journal
Materials Today Chemistry
Published
2025-06-09
DOI
https://doi.org/10.1016/j.mtchem.2025.102797
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Lewis based-Cs4PbBr6/EP with excellent radiation shielding properties achieved by the trade-off between electron density and electron binding energy

Kai Cui, Jingyang Li, Hong Yang, Wenjing Wei et al.
Materials Today Chemistry
Luminescence Properties of Advanced Materials
article

Lewis based-Cs4PbBr6/EP with excellent radiation shielding properties achieved by the trade-off between electron density and electron binding energy

Kai Cui, Jingyang Li, Hong Yang, Wenjing Wei, Yang Li, Xiaohong Wu, Tianyu Zhang, Wei Qin, Hongchao Zheng
article en

Abstract

Ionizing radiation in space causes various damage to electronic devices in spacecraft and thus affects the normal conduct of space exploration missions. Therefore, it is urgent to develop radiation shielding materials with excellent radiation shielding properties to improve the anti-radiation ability of electronic devices. In this work, Lewis base-modified perovskite as a functional filler was prepared using the ligand-assisted reprecipitation method, and the influence of electron transferring induced by the modification with Lewis bases on the radiation shielding properties of materials was investigated. For the TAA-Cs 4 PbBr 6 /EP composite material, the XPS results show that the binding energy of the Pb 4f 5/2 orbital electrons after TAA modification decreases from 143.1 eV to 142.8 eV. The theoretical calculation results show that the valence electron density of Pb modified by TAA has increased by 0.0167. Under the trade-off of the two effects of reduced electron binding energy and increased electron density, the radiation shielding efficiency of the material increased from 43.2 % to 46.4 %. The radiation resistance of the encapsulated MOSFET was investigated. TAA-MOS shows a lower threshold voltage offset of 1.55 V than that of the CPB-MOS (2.29 V) and Bare-MOS (3.36 V), indicating that the radiation shielding properties of TAA-Cs 4 PbBr 6 /EP have been significantly improved after modification. This study provides a new strategy for developing high-efficiency radiation shielding materials. • Lewis bases are employed to regulate the electronic structure of Cs 4 PbBr 6 . • The electron transferring increases the electron density and decreases the electron binding energy of the Pb atom. • The radiation shielding property of Cs 4 PbBr 6 is enhanced by the trade-off between electron density and binding energy. • The radiation resistance of MOSFET is significantly improved by packaging with Lewis based-Cs 4 PbBr 6 /EP.

Materials Today ChemistryVol. 47
Harbin Institute of Technology (CN), Heilongjiang Institute of Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 91%
Luminescence Properties of Advanced Materials
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