Optoelectronic Properties and Charge Carrier Dynamics of Polycrystalline ZnTe Thin Films
ZnTe is a wide-bandgap semiconductor with great potential for optoelectronic applications. The performance of ZnTe-based devices is strongly influenced by the dynamics of photogenerated carriers in polycrystalline films. In this work, we investigate the charge carrier dynamics in thermally evaporated polycrystalline ZnTe films under various pump intensities using transient absorption spectroscopy. We observe an inverse relationship between the pump intensity and free carrier lifetime. It is found that this anomalous behavior is attributed to the rapid trapping of free carriers by defects. Furthermore, by comparison of temperature-dependent TA spectra and steady-state absorption spectra, the temperature-dependent charge carrier dynamics and excitonic absorption have been evaluated.
Authors
- Zhenglin Jia
- Qianqian Lin (ORCID: https://orcid.org/0000-0002-6144-1761)
- Yuchuan Zhao
Institutions
- Ministry of Education of the People's Republic of China (CN)
- Wuhan University (CN)
- Henan Academy of Sciences (CN)
- Hubei University of Science and Technology (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2025-06-07
- DOI
- https://doi.org/10.1021/acs.jpclett.5c01253
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China
- Wuhan Science and Technology Project
- Basic and Applied Basic Research Foundation of Guangdong Province