A Complementary Metal Oxide Semiconductor Compatible Memristor Based on Titanium Dioxide for Neuromorphic Computing

Recently, memristor devices, the fourth fundamental circuit element, have been extensively investigated for nonvolatile memory, logic circuits, and neuromorphic computing applications. In this letter, a complementary metal oxide semiconductor (CMOS) compatible memristor device with W/TiO x /W structure is proposed for neuromorphic computing applications. The forming‐free analog switching ability, synaptic plasticity characteristics, and high pattern recognition accuracy close to 95 and 92% for letter images in training and validation results are demonstrated in the W/TiO x /W memristor device. Furthermore, all of the elements in the W/TiO x /W memristor device, including W electrodes and titanium dioxide layer, are highly compatible with the modern CMOS manufacturing process. These results displayed here reveal the potential of the fabricated W/TiO x /W memristor for neuromorphic computing applications with low cost.