Authors

• Kazuki Nomoto
• Debdeep Jena (ORCID: https://orcid.org/0000-0002-4076-4625)
• Lutz Kirste (ORCID: https://orcid.org/0000-0002-5274-2650)
• R. Quay (ORCID: https://orcid.org/0000-0002-3003-0134)
• Madhav Ramesh (ORCID: https://orcid.org/0000-0003-0396-561X)
• Isabel Streicher (ORCID: https://orcid.org/0000-0003-3653-0401)
• Thai‐Son Nguyen (ORCID: https://orcid.org/0000-0002-1193-834X)
• Chandrashekhar Savant (ORCID: https://orcid.org/0000-0001-7174-1103)
• Jimy Encomendero (ORCID: https://orcid.org/0000-0002-1597-1761)
• Huili Grace Xing (ORCID: https://orcid.org/0000-0002-2709-3839)
• Siyuan Ma
• Stefano Leone (ORCID: https://orcid.org/0000-0003-4579-3529)
• Patrik Straňák (ORCID: https://orcid.org/0000-0001-7012-6192)

Institutions

• Cornell University (US)
• Fraunhofer Institute for Applied Solid State Physics (DE)

Publication Details

Journal

Applied Physics Letters

Published

2025-06-02

DOI

https://doi.org/10.1063/5.0257333

Citations

2

Primary Topic

GaN-based semiconductor devices and materials

Type

article

Field-Weighted Citation Impact

2.52

Funders

• Office of Science
• Defense Sciences Office, DARPA