Moiré Engineering of Interlayer Coupling in WS<sub>2</sub>/MoS<sub>2</sub> Monolayers

Moiré superlattices enable the modification of electronic band structures and material properties by tuning interlayer couplings, holding great potential for designing multifunctional optoelectronic devices in color tuning, light harvesting, and light generation. While theoretical predictions suggest that moiré potentials can control interlayer couplings in heterostructures, experimental realizations remain challenging due to difficulties in dynamically manipulating moiré potentials. Here we systematically modify interlayer couplings in a WS<sub>2</sub>/MoS<sub>2</sub> heterobilayer by adjusting the excitation power and gate voltage to control moiré potentials. Increasing excitation power reduces the effective moiré potentials by influencing the filling of moiré traps, which suppress interlayer charge transfers and the <i>p</i>-doping effect on the WS<sub>2</sub> from the heterostructure. Additionally, power-dependent PL measurements at varying gate voltages demonstrate a prominent decrease in the heterostructure's sublinear slope, from 0.63 (no voltage) to 0.52 (<i>V</i><sub>G</sub> = 50 V), indicating enhanced moiré localization effects. This observation is verified by theoretical simulations of gate-tuned moiré potentials.

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Publication Details

Journal
Nano Letters
Published
2025-06-06
DOI
https://doi.org/10.1021/acs.nanolett.5c01539
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Moiré Engineering of Interlayer Coupling in WS2/MoS2 Monolayers

Yuerui Lu, Zhenliang Hu, Xueqian Sun, Yi Shi et al.
2 citations
Nano Letters
2D Materials and Applications
1.04
article

Moiré Engineering of Interlayer Coupling in WS2/MoS2 Monolayers

Yuerui Lu, Zhenliang Hu, Xueqian Sun, Yi Shi, Youwen Liu, Dongke Li, Jiajie Pei, Linglong Zhang, Caiye Zhu, Jian Kang, Siyuan Chang, Jiong Yang, Tong Tong, Han Yan, Haizeng Song, Muhammad Shahid Rafique, Mengfei Ji
article en
2 citations

Abstract

Moiré superlattices enable the modification of electronic band structures and material properties by tuning interlayer couplings, holding great potential for designing multifunctional optoelectronic devices in color tuning, light harvesting, and light generation. While theoretical predictions suggest that moiré potentials can control interlayer couplings in heterostructures, experimental realizations remain challenging due to difficulties in dynamically manipulating moiré potentials. Here we systematically modify interlayer couplings in a WS<sub>2</sub>/MoS<sub>2</sub> heterobilayer by adjusting the excitation power and gate voltage to control moiré potentials. Increasing excitation power reduces the effective moiré potentials by influencing the filling of moiré traps, which suppress interlayer charge transfers and the <i>p</i>-doping effect on the WS<sub>2</sub> from the heterostructure. Additionally, power-dependent PL measurements at varying gate voltages demonstrate a prominent decrease in the heterostructure's sublinear slope, from 0.63 (no voltage) to 0.52 (<i>V</i><sub>G</sub> = 50 V), indicating enhanced moiré localization effects. This observation is verified by theoretical simulations of gate-tuned moiré potentials.

Nano LettersVol. 25(24)
Australian National University (AU), University of Cambridge (GB), Suzhou University of Science and Technology (CN), Soochow University (CN), ASM International (Netherlands) (NL), Division of Materials Science and Engineering (AU), Zhejiang University (CN), Southeast University (CN), Fuzhou University (CN), Nanjing University (CN), Nanjing University of Aeronautics and Astronautics (CN)
National Natural Science Foundation of China, Graduate Research and Innovation Projects of Jiangsu Province
Openalex Percentile: Top 25%
2D Materials and Applications
1.04
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