Position sensitive Silicon photomultipliers with an Intrinsic Continuous Resistive Layer for Charge Division

Position sensitive silicon photomultipliers that utilize an intrinsic continuous resistive layer (CRL SiPMs) for charge division are reviewed, and new developments of one-dimensional (1D) CRL SiPMs are reported. This study compares and analyzes the position and timing characteristics of three 1D CRL SiPM configurations: square ring (SR) electrodes with microcell sizes of 15 μm and 20 μm, and a dual parallel side strip (DPSS) electrode with a 10 μm microcell size. The position resolution degrades as microcell size increases, whereas the position measurement error remains independent of microcell size. The larger measurement error observed in the 10 μm device is caused by reversed pulses rather than microcell size. At the mean photoelectron numbers of 230 for the 10 μm and 15 μm devices and 240 for the 20 μm device, the average position resolutions are 72.6 ± 13.6 μm, 128.7 ± 20.1 μm, and 196.2 ± 20.2 μm, position measurement errors are 79.8 ± 57.0 μm, 32.0 ± 24.0 μm, and 31.6 ± 26.4 μm, the time resolutions are 165.8 ± 111.2 ps, 96.0 ± 33.2 ps, and 198.0 ± 112.3 ps, respectively. Moreover, the SR structure exhibited better time resolution due to the shortest charge transmition path. Compared to the tetra lateral and SR structure 2D CRL SiPM, the orthogonal configuration of two 1D CRL SiPMs can eliminate electrode-induced barrel distortion in scintillation imaging detection, and acquire depth information of interaction (DOI). As a result, the 1D CRL SiPM with SR collection electrodes has an advantage for application in scintillation detection where high 3D space and timing resolution are needed.