Monolithic Integration of Indirect Electrically Pumped Colloidal Quantum Dot Light Source on Silicon Nitride Waveguide

Colloidal quantum dots (CQDs) exhibit advantages such as a broad and tunable emission spectrum, low-cost solution-based synthesis, and ease of heterogeneous integration, showing great potential in silicon-based optoelectronics. In this paper, we demonstrate an indirect electrically pumped CQD light source integrated with silicon nitride (SiNx) waveguides on a silicon substrate. The device utilizes an integrated electroluminescent green CQD light-emitting diode (QLED) to excite red CQDs deposited on the SiNx waveguides, with the emitted light coupled into the waveguides for transmission. The device achieves a maximum output power of 2.8 nW at the edge of waveguide output. With the advantages of low-cost post-processing on CMOS-compatible waveguides and applicability to CQDs of various wavelengths, this device holds potential for on-chip light source applications.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-06-06
DOI
https://doi.org/10.1109/led.2025.3577532
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Monolithic Integration of Indirect Electrically Pumped Colloidal Quantum Dot Light Source on Silicon Nitride Waveguide

Fankai Zheng, Jingrui Ma, Fang-Qing Zhao, Dan Wu et al.
IEEE Electron Device Letters
Photonic and Optical Devices
article

Monolithic Integration of Indirect Electrically Pumped Colloidal Quantum Dot Light Source on Silicon Nitride Waveguide

Fankai Zheng, Jingrui Ma, Fang-Qing Zhao, Dan Wu, Kai Wang, Depeng Li
article en

Abstract

Colloidal quantum dots (CQDs) exhibit advantages such as a broad and tunable emission spectrum, low-cost solution-based synthesis, and ease of heterogeneous integration, showing great potential in silicon-based optoelectronics. In this paper, we demonstrate an indirect electrically pumped CQD light source integrated with silicon nitride (SiNx) waveguides on a silicon substrate. The device utilizes an integrated electroluminescent green CQD light-emitting diode (QLED) to excite red CQDs deposited on the SiNx waveguides, with the emitted light coupled into the waveguides for transmission. The device achieves a maximum output power of 2.8 nW at the edge of waveguide output. With the advantages of low-cost post-processing on CMOS-compatible waveguides and applicability to CQDs of various wavelengths, this device holds potential for on-chip light source applications.

IEEE Electron Device LettersVol. 46(8)
Southern University of Science and Technology (CN), Shenzhen Technology University (CN)
National Natural Science Foundation of China, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 89%
Photonic and Optical Devices
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