Dependence of the conversion efficiency of CIGS solar cells on the incident laser wavelength for optical wireless power transmission

Abstract CIGS solar cells for optical wireless power transmission were irradiated with four lasers having a wavelength of 635 nm, 850 nm, 1064 nm, and 1208 nm. We investigated the dependence of conversion efficiency on the incident laser intensity and device temperature. The highest conversion efficiency was 30.3% when irradiated with a 1064 nm light with 0.18 W cm −2 , followed by 850 nm, 635 nm, and 1208 nm, in that order. The conversion efficiencies decreased with a temperature change from 20 °C to 60 °C, with the rate of decrease being the smallest at 1064 nm and the largest at 635 nm.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2025-06-06
DOI
https://doi.org/10.35848/1347-4065/ade1e0
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Dependence of the conversion efficiency of CIGS solar cells on the incident laser wavelength for optical wireless power transmission

Yusuke Oda, Hiroaki Nakamura, Shunsuke Shibui, Takato Ishiuchi et al.
Japanese Journal of Applied Physics
Chalcogenide Semiconductor Thin Films
article

Dependence of the conversion efficiency of CIGS solar cells on the incident laser wavelength for optical wireless power transmission

Yusuke Oda, Hiroaki Nakamura, Shunsuke Shibui, Takato Ishiuchi, Shiro Uchida, Riku Maeno, Shuntaro Fujii, Hiroshi Tomita, K. Satō, Reo Aoyama, Hironori Komaki, Moeka Chiba
article en

Abstract

Abstract CIGS solar cells for optical wireless power transmission were irradiated with four lasers having a wavelength of 635 nm, 850 nm, 1064 nm, and 1208 nm. We investigated the dependence of conversion efficiency on the incident laser intensity and device temperature. The highest conversion efficiency was 30.3% when irradiated with a 1064 nm light with 0.18 W cm −2 , followed by 850 nm, 635 nm, and 1208 nm, in that order. The conversion efficiencies decreased with a temperature change from 20 °C to 60 °C, with the rate of decrease being the smallest at 1064 nm and the largest at 635 nm.

Japanese Journal of Applied PhysicsVol. 64(7)
Idemitsu Kosan (Japan) (JP), Chiba Institute of Technology (JP)
Openalex Percentile: Top 89%
Chalcogenide Semiconductor Thin Films
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Dependence of the conversion efficiency of CIGS solar cells on the incident laser wavelength for optical wireless power transmission — Yusuke Oda, Hiroaki Nakamura, et al. · Japanese Journal of Applied Physics (2025) | TGRS Research Map | TGRS