MODELLESS PROCESSING OF DIODE MICROCURRENT DATA SPECIFIED AS TRENDLESS SEQUENCES (Selection of diodes according to the criterion of compliance with the reference group)
In this paper, a simple criterion for separating ‘reference’ (own) diodes (RDs) from defective (‘foreign’) diodes (DDs) having one or another defect, for example, arising in the process of their production, is proposed. The proposed criterion relies on the analysis of ‘reference’ distributions of ranges, which are obtained as a result of their calculations on a large array of microcurrent measurements obtained for each diode. If RDs form a certain set, then the union of all sweeps forms a certain confidence (the most probable) region (rectangle) on the graph, which serves as a kind of criterion for separating the diodes under test (close to RDs by their characteristics) from DDs. According to this criterion, the rectangle of parameters of defective diodes of the RPDD (нет расшифровки аббревиатуры) should form its own region, not intersecting or intersecting only partially with the RCRD (нет расшифровки аббревиатуры). Such behavior allows to reveal the differences in the behavior of defective diodes and to solve the main task ‘Friend-Foe’, relying on the parameters of ‘own’ product (object) and to distinguish it by a set of proposed parameters from ‘foreign’ (tested) product. A group of tested diodes (TD) forms its own rectangle of parameters – each RPTD (нет расшифровки аббревиатуры) can intersect the RCRD to varying degrees. This degree of overlap can be estimated from the external correlations. If the RPTD/RCRD area ratio falls within a given interval (defined by the operator), such diodes can be considered close to the set of EDs and pass the test. The other diodes under test, falling out of the specified interval, are rejected. The interval boundaries can be agreed in advance and depend on the specifics of production. The proposed method is quite general and can be applied not only to diodes (taken as an example), but also to various classes of the tested devices.
Authors
- R. K. Sagdiev
- Р. Р. Нигматуллин (ORCID: https://orcid.org/0000-0003-2931-4428)
- Mikhail V. Tkachuk
Institutions
- Kazan State Technical University named after A. N. Tupolev (RU)
Publication Details
- Journal
- Bezopasnost informacionnyh tehnology
- Published
- 2025-05-01
- DOI
- https://doi.org/10.26583/bit.2025.2.10
- Primary Topic
- Advanced Research in Systems and Signal Processing
- Type
- article
- Field-Weighted Citation Impact
- 0.00