Measurements of dislocations in 4H-SiC with rocking curve imaging

Abstract 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. Gaussian fitting was applied to the rocking curves, and the resulting maps were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.

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Publication Details

Journal
Journal of Physics Conference Series
Published
2025-05-01
DOI
https://doi.org/10.1088/1742-6596/3010/1/012170
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.73
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article

Measurements of dislocations in 4H-SiC with rocking curve imaging

Sven Karsten Hampel, Gero Falkenberg, Tobias Erlbacher, Svenja Patjens et al.
1 citations
Journal of Physics Conference Series
Silicon Carbide Semiconductor Technologies
0.73
article

Measurements of dislocations in 4H-SiC with rocking curve imaging

Sven Karsten Hampel, Gero Falkenberg, Tobias Erlbacher, Svenja Patjens, Dennis Brückner, Stefanie H. Habenicht, Jan Garrevoet, Peter Modregger, Michael Stückelberger, Giovanni Fevola, Jackson L. Barp, Felix Wittwer, Gerald Falkenberg, Niklas Pyrlik, Ahmar Khaliq, Firas Faisal
article en
1 citations

Abstract

Abstract 4H Silicon Carbide (4H-SiC) combines many attractive properties such as a high carrier mobility, a wide bandgap, and a high thermal conductivity, making it an ideal candidate for high-power electronic devices. However, a primary challenge in utilizing 4H-SiC is the presence of defects in epitaxial layers, which can significantly degrade device performance. In this study, we have used X-ray transmission topography with a rocking curve imaging technique to characterize the types and distribution of defects in 4H-SiC. Gaussian fitting was applied to the rocking curves, and the resulting maps were used to investigate dislocations in 4H-SiC. Understanding the distribution of the dislocations provides valuable insights into the overall crystal quality, which can guide improvements for the fabrication processes.

Journal of Physics Conference SeriesVol. 3010(1)
University of Siegen (DE), Deutsches Elektronen-Synchrotron DESY (DE)
Openalex Percentile: Top 27%
Silicon Carbide Semiconductor Technologies
0.73
DOIOpen Access PDFOpenAlex
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Measurements of dislocations in 4H-SiC with rocking curve imaging — Sven Karsten Hampel, Gero Falkenberg, et al. · Journal of Physics Conference Series (2025) | TGRS Research Map | TGRS