Dual‐Way Alternation Sensing Memristors Based on (BA) ₂ (MA) ₃ Pb ₄ Br ₁₃ Ferroelectric Quantum Dots with Sub‐0.16 V Switching for Broadband Image‐Recognition Systems

Abstract The traditional research on organic‐inorganic hybrid perovskite can only realize single visible‐light band sensing, which cannot meet the demand of flexible sensing adjustment of distance. Here, the ferroelectric (BA) 2 (MA) 3 Pb 4 Br 13 quantum dots (BMP‐QDs) are proposed and the Pd/BMP‐QDs/Nb:SrTiO₃ sensing memristors are designed. The memristor exhibits robust ferroelectric polarization properties with sub‐0.16 V ferroelectric switching and excellent fatigue resistance over 10⁹ cycles, and the 8 × 10 4 ON/OFF ratio. In addition, a broadband dual‐way alternation optical sensing behavior of the BMP‐QDs memristor is found under the ferroelectric polarization of different‐voltage regulations. At the BMP‐QDs unpolarized state, it mainly acts as a short‐range perception which has a linear optical response under the 405–808 nm. At a bias voltage, the film undergoes ferroelectric polarization, its perceived range is large, and the device exhibits remote optical‐sensing synapse behavior. Based on above dual‐way alternation, the built broadband image‐recognition system achieved a digital handwriting recognition accuracy of 87.5% under near‐infrared, while the clothing recognition accuracy based on the reservoir computing system reached 93.5% under visible lights. This study provides new ideas and application prospects for optoelectronic sensing and neuromorphic computing.