Scalable alloy-based sputtering of high-conductivity PdCoO2 for advanced interconnects
As integrated circuits continue to scale down, the search for alternative metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO2 is one of the candidate materials for interconnects, having bulk ab-plane conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO2, crucial for interconnect applications, has not yet been reported. In this study, we demonstrate the scalable growth of c-axis oriented PdCoO2 thin films via reactive sputtering from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO2 in semiconductor devices.
Authors
- Takuro Nagai (ORCID: https://orcid.org/0000-0001-5239-3334)
- T. Harada (ORCID: https://orcid.org/0000-0002-8657-2258)
- Yasushi Masahiro (ORCID: https://orcid.org/0000-0003-4526-6817)
- Yutaka Sakakibara
- Zuin Ping Lily Ang
Institutions
- National Institute for Materials Science (JP)
- Nihon Dempa Kogyo (Japan) (JP)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1063/5.0260219
- Citations
- 2
- Primary Topic
- Copper Interconnects and Reliability
- Type
- article
- Field-Weighted Citation Impact
- 0.85
Funders
- Japan Society for the Promotion of Science London
- Precursory Research for Embryonic Science and Technology