Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor
Two-dimensional (2D) reconfigurable devices, known for their embedded multiple logic functions, are promising for next-generation electronics and optoelectronics. Here, we present a middle-overlapped dual-gate field-effect transistor (MODG-FET) based on a MoS2/h-BN/graphene heterostructure, which integrates reconfigurable logic functions between AND and a follower within a single device. Arising from the programmable nonvolatile photoactivated charges trapped in the h-BN, the reconfiguration is achieved by simultaneously utilizing electrical and optical signals rather than one sole signal in conventional devices, enabling more hardware security for logic gate circuits. Leveraging this behavior, we demonstrate the MODG-FET for hardware encryption and decryption to process ASCII codes by using the gate voltage pulse and UV light stimulation as a key. This work should be helpful in the development of 2D reconfigurable logic transistors, offering high energy and area efficiency while enhancing hardware security in future logic gate circuits, meeting the urgent demand for state-of-the-art information technology.
Authors
- Z. Zhang (ORCID: https://orcid.org/0000-0003-3919-9347)
- Zhe Sheng
- Penghao Chen (ORCID: https://orcid.org/0000-0002-9855-5092)
- Y. Tian (ORCID: https://orcid.org/0009-0008-6030-4264)
- Zheng Zhang (ORCID: https://orcid.org/0000-0002-1568-2732)
- Haoran Sun (ORCID: https://orcid.org/0000-0001-5514-6144)
- Ziyu Ming
Institutions
- Hangzhou Normal University (CN)
- Fudan University (CN)
- Shanghai Innovative Research Center of Traditional Chinese Medicine (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2025-06-03
- DOI
- https://doi.org/10.1021/acsaelm.5c00671
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China