Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Two-dimensional (2D) reconfigurable devices, known for their embedded multiple logic functions, are promising for next-generation electronics and optoelectronics. Here, we present a middle-overlapped dual-gate field-effect transistor (MODG-FET) based on a MoS2/h-BN/graphene heterostructure, which integrates reconfigurable logic functions between AND and a follower within a single device. Arising from the programmable nonvolatile photoactivated charges trapped in the h-BN, the reconfiguration is achieved by simultaneously utilizing electrical and optical signals rather than one sole signal in conventional devices, enabling more hardware security for logic gate circuits. Leveraging this behavior, we demonstrate the MODG-FET for hardware encryption and decryption to process ASCII codes by using the gate voltage pulse and UV light stimulation as a key. This work should be helpful in the development of 2D reconfigurable logic transistors, offering high energy and area efficiency while enhancing hardware security in future logic gate circuits, meeting the urgent demand for state-of-the-art information technology.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-06-03
DOI
https://doi.org/10.1021/acsaelm.5c00671
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
1.46

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article

Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Z. Zhang, Zhe Sheng, Penghao Chen, Y. Tian et al.
2 citations
ACS Applied Electronic Materials
Advanced Memory and Neural Computing
1.46
article

Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Z. Zhang, Zhe Sheng, Penghao Chen, Y. Tian, Zheng Zhang, Haoran Sun, Ziyu Ming
article en
2 citations

Abstract

Two-dimensional (2D) reconfigurable devices, known for their embedded multiple logic functions, are promising for next-generation electronics and optoelectronics. Here, we present a middle-overlapped dual-gate field-effect transistor (MODG-FET) based on a MoS2/h-BN/graphene heterostructure, which integrates reconfigurable logic functions between AND and a follower within a single device. Arising from the programmable nonvolatile photoactivated charges trapped in the h-BN, the reconfiguration is achieved by simultaneously utilizing electrical and optical signals rather than one sole signal in conventional devices, enabling more hardware security for logic gate circuits. Leveraging this behavior, we demonstrate the MODG-FET for hardware encryption and decryption to process ASCII codes by using the gate voltage pulse and UV light stimulation as a key. This work should be helpful in the development of 2D reconfigurable logic transistors, offering high energy and area efficiency while enhancing hardware security in future logic gate circuits, meeting the urgent demand for state-of-the-art information technology.

ACS Applied Electronic MaterialsVol. 7(12)
Hangzhou Normal University (CN), Fudan University (CN), Shanghai Innovative Research Center of Traditional Chinese Medicine (CN), Shanghai Fudan Microelectronics (China) (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 17%
Advanced Memory and Neural Computing
1.46
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Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor — Z. Zhang, Zhe Sheng, et al. · ACS Applied Electronic Materials (2025) | TGRS Research Map | TGRS