Time-dependence Dielectric Breakdown of Novel Dopant-Segregated Tunneling Field Effect Transistors Based on Foundry Platform
In this work, the time-dependence dielectric breakdown (TDDB) of the novel dopant-segregated tunneling field effect transistor (DS-TFET) based on the standard CMOS baseline platform is investigated and compared with conventional MOSFET. Results show that the TDDB lifetime under operation voltage exceeds 10 years, while the maximum overdrive voltage of DS-TFET is lower than MOSFET, indicating the importance of reliability-aware design for low voltage applications.
Authors
- Weihai Bu
- Qianqian Huang (ORCID: https://orcid.org/0000-0002-3714-8581)
- Ru Huang (ORCID: https://orcid.org/0000-0002-8146-4821)
- Kaifeng Wang (ORCID: https://orcid.org/0000-0001-8353-7505)
- Ye Ren
- Hongyan Han
- Yongqin Wu
- Jianfeng Hang
- Rundong Jia (ORCID: https://orcid.org/0000-0002-8954-7429)
Institutions
- Peking University (CN)
- Semiconductor Manufacturing International (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017817
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00