Highly Effective and Flexible Device Designs for High-Voltage ESD Protection
In this paper, ESD protection structures are studied in response to the growing demands driven by the rapid development of high-voltage (HV) BCD platforms and HV analog products. ESDPNP devices, featuring a guardring stacked design and flexible implantation combination, show great promise as HV ESD protection solutions. These devices can be modulated with trigger voltage ranging from 15 to 100V by precisely tuning device internal dimensions. Additionally, high failure current (2-4A) are achieved by adjusting the collector doping type. The thermal failure mechanism and potential performance deterioration are discussed, providing guidance for future improvements in device design.
Authors
- Yulei Jiang (ORCID: https://orcid.org/0000-0001-9322-0958)
- Can Chen (ORCID: https://orcid.org/0000-0002-2132-494X)
- Leyan Wang (ORCID: https://orcid.org/0009-0007-5975-1000)
Institutions
- Semiconductor Manufacturing International (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017935
- Primary Topic
- Electrostatic Discharge in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00