Evaluation of Hotspots EPE Propagation Through Step-By-Step SEM Contour Analysis

In high-volume manufacturing (HVM), accurately identifying process issues is essential, as it directly influences both product quality and production efficiency. Effective fault localization allows teams to quickly detect and address potential defects, thereby minimizing resource waste and delays. However, troubleshooting process problems often involves indirect data analysis. Teams must monitor and analyze changes in various parameters, including recipe settings, environmental conditions, and equipment performance, to infer the underlying root causes.This article presents a novel troubleshooting approach based on contour and statistical analysis. By directly comparing graphical differences between process steps and analyzing changes in critical dimension (CD) distribution, this method identifies issues from overall process variations down to specific changes caused by individual steps. This approach not only streamlines troubleshooting but also significantly reduces the time required to resolve problems.Moreover, the method goes beyond simple variation detection by quantifying differences using CD values. It disaggregates localized variations within SEM image dimensions, providing detailed insights into the extent of deterioration between inspection sites. As a result, it minimizes the number of inspection sites needed and accelerates problem resolution, offering a more efficient and precise way to manage process-related issues.

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Published
2025-03-24
DOI
https://doi.org/10.1109/cstic64481.2025.11017929
Primary Topic
Electron and X-Ray Spectroscopy Techniques
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article
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article

Evaluation of Hotspots EPE Propagation Through Step-By-Step SEM Contour Analysis

Jingjing Wang, Tao Zhu, Kan Zhou, Peng Chen et al.
Electron and X-Ray Spectroscopy Techniques
article

Evaluation of Hotspots EPE Propagation Through Step-By-Step SEM Contour Analysis

Jingjing Wang, Tao Zhu, Kan Zhou, Peng Chen, Danni Shao, Wenzhan Zhou
article en

Abstract

In high-volume manufacturing (HVM), accurately identifying process issues is essential, as it directly influences both product quality and production efficiency. Effective fault localization allows teams to quickly detect and address potential defects, thereby minimizing resource waste and delays. However, troubleshooting process problems often involves indirect data analysis. Teams must monitor and analyze changes in various parameters, including recipe settings, environmental conditions, and equipment performance, to infer the underlying root causes.This article presents a novel troubleshooting approach based on contour and statistical analysis. By directly comparing graphical differences between process steps and analyzing changes in critical dimension (CD) distribution, this method identifies issues from overall process variations down to specific changes caused by individual steps. This approach not only streamlines troubleshooting but also significantly reduces the time required to resolve problems.Moreover, the method goes beyond simple variation detection by quantifying differences using CD values. It disaggregates localized variations within SEM image dimensions, providing detailed insights into the extent of deterioration between inspection sites. As a result, it minimizes the number of inspection sites needed and accelerates problem resolution, offering a more efficient and precise way to manage process-related issues.

Shanghai Huali Microelectronics (China) (CN)
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Openalex Percentile: Top 89%
Electron and X-Ray Spectroscopy Techniques
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Evaluation of Hotspots EPE Propagation Through Step-By-Step SEM Contour Analysis — Jingjing Wang, Tao Zhu, et al. · (2025) | TGRS Research Map | TGRS