RF Switch-LNA Integration for RFFE In 65nm SOI Technology

Design and analysis of high performance RF Switch and LNA with technology co-optimization is integrated for RFFE with cost effective in 65nm SOI process. A high performance RF switch SPDT is design and realized with insertion loss (IL) lower than 0.4dB and isolation greater than 24dB from 0 to 8GHz bandwidth with peak power operation capacity greater than 36dBm while harmonic distortion power <-54dBm. Design of 45V antenna tuning switch SPSTx4 achieves pure IL of one SPST is less than 0.28dB while the pure isolation is greater than 11dB from 0 to 6GHz with peak power operation capacity greater than 43.5dBm while harmonic distortion lower than -48dBm. Design of a low power full integrated cascode LNA at 2.5GHz is implemented with gain of 22dB, NF of 0.7dB, P1dB and IIP3 of -19.8dBm and -2.2dBm. It demonstrates great potential of high performance low cost RF Switch-LNA integration for advanced RFFE module SoC applications in 65nm SOI technology.