The Influence of Writing Pulse on Memory Window of FE-FinFET
In this work, we research the storage characteristics of ferroelectric transistors by experiments and simulations. Firstly, the FE-FinFET (fin field-effect transistor) with 9nm-HZO ferroelectric dielectric layer is used to research the influence of the amplitude and width of writing pulse on the storage characteristics, and we have a simple analysis. In addition, we simulate the experimental process with technology computer aided design (TCAD) models and obtain the same results.
Authors
- Ziming Xu (ORCID: https://orcid.org/0000-0002-0002-7874)
- Jiahao Yao (ORCID: https://orcid.org/0000-0003-0273-0149)
- Zhaohao Zhang (ORCID: https://orcid.org/0000-0002-1583-9939)
- Gaobo Xu (ORCID: https://orcid.org/0000-0002-4278-251X)
- Siyuan Liu (ORCID: https://orcid.org/0000-0002-2142-879X)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017978
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Research and Development