An 80 V P-Type Organic Semiconductor-Based Power Field-Effect Transistor Featuring a Stair Gate Dielectric Structure

In recent years, power devices are widely studied for power transmission systems, but research on organic semiconductor-based devices, hindering their potential in power applications. In this work, we present a novel approach involving p-type high-voltage (HV) organic field-effect transistors (OFETs) that utilize a stair gate dielectric (SGD) structure on both the source and drain sides. This SGD structure has successfully increased the breakdown voltage from 19 V to 80 V by effectively reducing the electric field between the drain and gate. For devices with a stair length (L<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SGD</inf>) of 50 μm, the on-resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>) shows only a 20% degradation compared to conventional devices. The proposed SGD OFETs demonstrate the capability to achieve both high breakdown voltage and low on-resistance simultaneously.