FPGA-Based Sensorless Condition Monitoring System for GaN HEMT

In this work, a FPGA-based sensorless condition monitoring system for GaN HEMT was demonstrated. Constructing a resistive load switching circuit with a clamp circuit and a SiC MOSFET to isolate the gate and drain, the proposed field-programmable gate array (FPGA)-based sensorless condition monitoring system improved the measurement accuracy. The system was used to investigate the impact of drain voltage and temperature on Ron. The increasing drain voltage led to an increased Ron can be explained by the "lucky electron" model. As the temperature increased, the atomic vibrations in the semiconductor lattice intensified, which influenced electron scattering and caused the GaN HEMT’s Ron rising.