Accelerated Simulation of Electromigration Based on Equivalent Circuit

Electromigration (EM) is a critical reliability issue in modern VLSI design. Traditional EM models often struggle with the trade-off between accuracy and computational efficiency. To address this, we propose an accelerated simulation approach using finite difference methods (FDM) to transform the EM system into a lumped-element circuit model. This model is further optimized with model order reduction (MOR) techniques, enabling faster and accurate stress evolution analysis. Our approach accommodates non-uniform stress distributions and time-varying current conditions. Experimental results show that our method achieves high accuracy compared to finite element analysis, providing a scalable solution for transient EM analysis in large-scale interconnects.