DTI Profile and Depth Uniformity Tuning by Ra and Gas Distribution
With the development of the semiconductor industry, dies are getting smaller and smaller and the application of DTI <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]-[5]</sup> (Deep Trench Isolation) is becoming more and more extensive. In the process of DTI demo tuning, profile and uniformity tuning have high requirements of the tool and knobs.Applied’s Sym3™Via2 conductor Etch system is equipped with an advanced RF power system, which can precisely control of plasma density for profile tuning. This paper introduces DTI profile and depth uniformity tuning by current ratio (Ra) and gas distribution Etching method.
Authors
- Yan Shi-ming
- Yanhui Li (ORCID: https://orcid.org/0000-0001-7444-9431)
- Lei Sun (ORCID: https://orcid.org/0000-0003-1451-1875)
- Tianfei Lu
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017928
- Citations
- 1
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.73