A Streamlined Electro-Thermal-Mechanical Simulation Method for Power Semiconductor Packaging Design

This paper demonstrates an efficient electro-thermal -mechanical simulation process for validating MOSFET packaging designs. Two PCB copper layouts and two packaging designs are discussed regarding to weak or risk points in current density and temperature distributions. Methods for validating solder joint electromigration and stress under power cycling are proposed. The study offers a streamlined simulation framework for packaging design of power semiconductor devices at operational currents.

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Publication Details

Published
2025-03-24
DOI
https://doi.org/10.1109/cstic64481.2025.11017895
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
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article

A Streamlined Electro-Thermal-Mechanical Simulation Method for Power Semiconductor Packaging Design

Daniel Wu, Zhifeng Huang, Rujiao Sun
3D IC and TSV technologies
article

A Streamlined Electro-Thermal-Mechanical Simulation Method for Power Semiconductor Packaging Design

Daniel Wu, Zhifeng Huang, Rujiao Sun
article en

Abstract

This paper demonstrates an efficient electro-thermal -mechanical simulation process for validating MOSFET packaging designs. Two PCB copper layouts and two packaging designs are discussed regarding to weak or risk points in current density and temperature distributions. Methods for validating solder joint electromigration and stress under power cycling are proposed. The study offers a streamlined simulation framework for packaging design of power semiconductor devices at operational currents.

Taiwan Semiconductor Manufacturing Company (China) (CN)
Affordable and clean energy
Openalex Percentile: Top 90%
3D IC and TSV technologies
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