Study of Poly-Si Etch Rate Sensitivity with Pulsing mode of RF Powers for Soft-Landing Step in Gate Patterning Process
Pulsed plasma has been developed to enlarge the etch control window for 32nm node technology and below. This article systematically studied the characteristics of etch rate sensitivity by orthogonal design of experiment (DOE) with this pulsed plasma. In addition, three types of pulsing modes in Cl2 and HBr based plasma are investigated to provide guidelines for the soft landing step in selective poly gate etching process.
Authors
- Chao Xu (ORCID: https://orcid.org/0000-0002-8423-0342)
- Litian Xu
- Chong Wu (ORCID: https://orcid.org/0000-0003-1017-4496)
Institutions
- NAURA (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11018034
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00