Effect of Sulfur-Containing Corrosion Inhibitors on the Selection Ratio of Removal Rate for Ruthenium Based Copper Interconnects
As integrated circuit technology develops to nodes below 10 nm, the one-step chemical mechanical polishing (CMP) process for Cu films requires a high removal rate (RR) for copper (Cu) as an interconnection material, while maintaining a near-zero RR for ruthenium (Ru) employed as a barrier. This study studied the impact of two sulfur-containing corrosion inhibitors on the RR and selectivity of Cu/Ru. The results revealed that when using 3.5 wt% L-methionine (L-Met) as a corrosion inhibitor, the selectivity ratio of Cu/Ru RR reached 310, and the surface roughness (Sq) was effectively improved.
Authors
- Xinhuan Niu (ORCID: https://orcid.org/0000-0002-3046-0046)
- Zheng Huan Wu
- Ni Zhan
- Jiakai Zhou (ORCID: https://orcid.org/0000-0001-7029-6933)
- Bin Hu (ORCID: https://orcid.org/0000-0002-2696-4348)
- J J Li
Institutions
- Hebei University of Technology (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017822
- Primary Topic
- Copper Interconnects and Reliability
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hebei Province