Effect and Optimization of Ge Pre-Amorphous Implantation on Nickel Silicide
The effect of energy and dose of Ge pre-amorphous implantation (PAI) on the quality of nickel silicide (NiSi) and the roughness of NiSi/Si interface is investigated. With the increase of PAI energy and dose, the thickness of amorphous silicon (a-Si) formed gradually increases, and the sheet resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf>) of NiSi also increases. With medium energy and low dose, the roughness of the NiSi/Si interface is effectively improved, and the R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> is reduced by 8.96%.
Authors
- Xianchang Du
- Weitong Zhang (ORCID: https://orcid.org/0000-0001-6254-161X)
- Jianghong Wang (ORCID: https://orcid.org/0000-0002-9466-5374)
- Yunyan Zhang (ORCID: https://orcid.org/0000-0002-2196-7291)
Institutions
- Zhejiang University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017847
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Zhejiang University