Ferroelectric Materials, Devices and Chip Technologies for Enhanced Computational and Storage Capabilities
The paper discussed recent progresses of hafnium oxide-based ferroelectric materials, devices and chip technologies which improves the performance, reliability and energy efficiency, indicating the feasibility of ferroelectric devices for computational and storage enhancement.
Authors
- Chengji Jin (ORCID: https://orcid.org/0000-0002-8517-459X)
- Jiuren Zhou (ORCID: https://orcid.org/0000-0002-0915-5354)
- Jiajia Chen (ORCID: https://orcid.org/0000-0002-7573-176X)
- Huan Liu (ORCID: https://orcid.org/0000-0002-0253-647X)
- Bing Chen (ORCID: https://orcid.org/0000-0001-5284-8618)
- Genquan Han
- Yue Hao (ORCID: https://orcid.org/0000-0001-8131-7509)
- Haoji Qian
- Xiao Yu
- Yan Liu (ORCID: https://orcid.org/0009-0003-3120-3011)
Institutions
- Xuzhou University of Technology (CN)
- Xidian University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017821
- Primary Topic
- Modular Robots and Swarm Intelligence
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Research and Development