A high-order compensated bandgap reference design with a buffer circuit

To address the issue of low power supply rejection ratio (PSRR) in traditional bandgap reference circuits, a novel bandgap reference scheme is proposed. This scheme employs a five-transistor unit and an emitter follower to form a two-stage operational amplifier, isolating the reference voltage from other modules and thereby ensuring the gain of the reference generation circuit. Additionally, a high-order compensation circuit is introduced to reduce temperature drift and enhance precision. Based on a $0.18 \mu \mathrm{~m}$ BCD process and validated through Cadence simulations, the results demonstrate a temperature drift of $\mathbf{T}_{\text {dit, REF1 }}$ $=20 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ and a power supply rejection ratio of -113 dB over a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$. This circuit is capable of generating high-precision reference voltages and bias currents.

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Publication Details

Published
2025-03-21
DOI
https://doi.org/10.1109/iscait64916.2025.11010629
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
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article

A high-order compensated bandgap reference design with a buffer circuit

Xihu Wang, Mengfan Sun, Yangyang Zhang, Chang Liu
Analog and Mixed-Signal Circuit Design
article

A high-order compensated bandgap reference design with a buffer circuit

Xihu Wang, Mengfan Sun, Yangyang Zhang, Chang Liu
article en

Abstract

To address the issue of low power supply rejection ratio (PSRR) in traditional bandgap reference circuits, a novel bandgap reference scheme is proposed. This scheme employs a five-transistor unit and an emitter follower to form a two-stage operational amplifier, isolating the reference voltage from other modules and thereby ensuring the gain of the reference generation circuit. Additionally, a high-order compensation circuit is introduced to reduce temperature drift and enhance precision. Based on a $0.18 \mu \mathrm{~m}$ BCD process and validated through Cadence simulations, the results demonstrate a temperature drift of $\mathbf{T}_{\text {dit, REF1 }}$ $=20 \mathrm{ppm} /{ }^{\circ} \mathrm{C}$ and a power supply rejection ratio of -113 dB over a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$. This circuit is capable of generating high-precision reference voltages and bias currents.

Xi’an University of Posts and Telecommunications (CN)
Affordable and clean energy
Openalex Percentile: Top 88%
Analog and Mixed-Signal Circuit Design
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