Evaluation and Improvements of TSV Distortion Characteristics in High Aspect Ratio TSV Etch

In this paper, the TSV abnormal distortion characteristics of the silicon through hole in the TSV etching process are investigated. At first the origin of the abnormality in the process of TSV etching is analyzed. Then a new processing and measurement calculation method about the TSV process is developed to characterize the TSV distortion index. Moreover, a series of key parameters are summarized based on the experiment data to quantify the distortion characteristics of the TSV in the recipe. Finally, a guide of new structure design is proposed to improve the TSV distortion based on the analysis to TSV process tool.