Use Damascus CMP to fabricate IGZO transistor in advanced Dram technology

IGZO is a new kind channel material that possible be used in the most advanced Dram technology, with its most attractive capability of extremely low I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> and long retention time as transistor, eighter in 1T1C structure or in 2T0C structure. For the first time, we fabricated a vertical transistor that consist of IGZO/AlO/IZO materials on pattern wafer by Damascus CMP method. To achieve a good post CMP dishing, we tested different kinds of slurry and finally chosen an acid and contained H2O2 slurry.