High-Resolution Patterning of Directed Self-Assembly (DSA) Lithography Via Universal Orientation Control Method

Directed self-assembly (DSA), as an emerging nano-manufacturing technology, demonstrates significant potential in advanced nodes in semiconductor field. This paper reports a method for controlling the domain orientation of fluorinated block copolymers (named as FV-1) on graphoepitaxy template, successfully producing high-resolution line and contact hole patterns with dimensions as small as 8 nm, without using molecular brushes or topcoat materials. This method realizes the combination with traditional lithography techniques, overcoming the limitations of lithography when scaling down. And the process flow is relatively simple, highlighting its strong application prospects.