Uncertainty Quantification on Multiscale Modeling of RRAM Devices

This work employs the uncertainty quantification method to systematically analyze the power consumption and forming voltage in RRAM devices, emphasizing the significant role of material factors in multiscale and multiphysics processes. The uncertainty quantification approach drives a macroscopic-scale thermoelectric model to simulate RRAM switching and identifies key parameters. Furthermore, the same approach is adopted to control a mesoscale phase-field model that simulates the kinetics of conductive filament evolution. The results of the two models complement each other and provide a better understanding of the dynamics occurring inside the RRAM device and the origin of the performance uncertainty.