The Effect of Post Cooling Time of Single Wafer Annealing on TDDB Reliability
The (Back-End of Line) BEOL single wafer annealing after electroplating copper of integrated circuit manufacturing is generally used for repairing lattice damage on the surface of copper metal. This process is simple and involves a specific time of heat treatment on the wafer at a constant temperature, with minimal impact on the electrical performance of the wafer. But recent research has found that the cooling time of wafers after single wafer annealing can have a significant impact on the reliability of their devices, and in severe cases, can cause device failure. This paper investigates the impact of cooling time after annealing on device reliability and analyzes the mechanism behind it.
Authors
- Dongliang Gao
- Jinkun Geng (ORCID: https://orcid.org/0000-0002-6574-8349)
- Cunzhe He
- Xuan Liu (ORCID: https://orcid.org/0000-0003-2937-6338)
Institutions
- Semiconductor Manufacturing International (China) (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017857
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00