Impact of X-ray Irradiation on Transfer Characteristics of Fin-FeFET Devices

This study investigates the write and erase characteristics of ferroelectric field-effect transistors (FeFETs) under different voltage conditions, as well as their electrical performance changes in irradiated environments. Through ±4V DC scanning and ±4V, 100 ns pulse operations, we observed a significant clockwise hysteresis in the device's transfer characteristics, with threshold voltage shifts representing the memory window of the FeFET. In the X-ray total ionizing dose irradiation tests, we analyzed the impact of irradiation on the electrical characteristics and storage properties of HZO-based FeFETs, revealing phenomena such as leftward drift of the transfer characteristic curves and reduction of the memory window. By integrating the radiation damage mechanisms of HZO films, we examined the influence of fixed trap charge generation on polarization strength and threshold voltage. The results indicate a significant degradation of electric field distribution and polarization characteristics in the HZO film after irradiation, affecting the device's memory capacity.