LC-VCO with Wide Tuning Range Based on 65NM Process

A low-noise, wide-bandwidth NMOS cross-coupled LC-VCO is designed in a 65nm CMOS process. The oscillator select High-Q differential inductors and capacitors for thermal noise optimization and a bias current mirror as the tail current source. A configurable capacitor array extends the tuning range while maintaining low power consumption. A buffer circuit enhances output drive capability. Simulated in Cadence, the VCO achieves a frequency range of 6.64 – 10.17 GHz with a 0 – 2.5 V control voltage, phase noise of -52.19 to -64.37 dBc/Hz at 10 kHz offset, and a tuning gain KVCO of 31–120 MHz/V.

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Published
2025-03-24
DOI
https://doi.org/10.1109/cstic64481.2025.11017859
Primary Topic
Advancements in Photolithography Techniques
Type
article
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article

LC-VCO with Wide Tuning Range Based on 65NM Process

Xinan Chen, Lina Huang, Liu Chuanjun
Advancements in Photolithography Techniques
article

LC-VCO with Wide Tuning Range Based on 65NM Process

Xinan Chen, Lina Huang, Liu Chuanjun
article en

Abstract

A low-noise, wide-bandwidth NMOS cross-coupled LC-VCO is designed in a 65nm CMOS process. The oscillator select High-Q differential inductors and capacitors for thermal noise optimization and a bias current mirror as the tail current source. A configurable capacitor array extends the tuning range while maintaining low power consumption. A buffer circuit enhances output drive capability. Simulated in Cadence, the VCO achieves a frequency range of 6.64 – 10.17 GHz with a 0 – 2.5 V control voltage, phase noise of -52.19 to -64.37 dBc/Hz at 10 kHz offset, and a tuning gain KVCO of 31–120 MHz/V.

Shaoxing University (CN)
Affordable and clean energy
Openalex Percentile: Top 90%
Advancements in Photolithography Techniques
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