Optimization of a Novel Integrated Zener Diode with Polysilicon Structure for Gate Protection in 55 nm BCD Technology
the Zener diode is a common choice for MOSFET gate protection. Compared with conventional Zener diode, a novel integrated Zener diode with polysilicon structure for gate protection in 55nm BCD technology is proposed and fabricated in this research. By optimizing the manufacture process, the Zener diode owns the stable breakdown voltage at 5.8V and leakage current at 3.62 mA. Moreover, using the polysilicon gate structure and I/O P-type lightly doped drain (IOPLDD) layer in the Zener diode can effectively avoid the Zener walkout effect caused by hot carrier accumulation around the shallow trench isolation (STI) in the conventional Zener diode.
Authors
- Xiaoyun Huang (ORCID: https://orcid.org/0000-0002-1718-0648)
- Dawei Gao (ORCID: https://orcid.org/0009-0002-7786-1506)
- Yongyu Wu
- Pingrui Kang
- Kai Xu (ORCID: https://orcid.org/0000-0003-3837-7922)
- Fang Liu (ORCID: https://orcid.org/0000-0002-0272-1181)
- Yanning Chen (ORCID: https://orcid.org/0000-0002-1337-9668)
- Bo Wu (ORCID: https://orcid.org/0000-0002-7386-8279)
- Yixian Song
- Yongfeng Deng
Institutions
- Beijing Microelectronics Technology Institute (CN)
- Zhejiang University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11017896
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00