Depth Uniformity of Silicon and Dielectric Trenches Etching for the Burried Wordline of Novel Memory

Advanced integrated circuit device structures drive advances in advanced process methods and precision equipment. We have explored two ideas for simultaneously etching different substances to the same depth in a small-size deep trench buried wordline etching process for alternating silicon and dielectric layers of a new memory, which achieves both good control of silicon column morphology in the compensated mode and small-size deep trench with good depth uniformity by optimizing the size of the trench opening.