Enhanced on-State Current and Reduced Contact Resistance in TiO<sub>2</sub> Channel HfLaO FeFETs Via Post-Metallization Annealing
This work investigates the impact of post-metallization annealing (PMA) and post-deposition annealing (PDA) on the electrical properties of La-doped HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FeFETs with a TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel. Compared to PDA, PMA enhances the on-state current by improving contact between the source/ drain electrodes and the channel, as well as increasing channel mobility. This work provides insights into the process impact on the performances of FeFETs with TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channels.
Authors
- Xiaoyan Liu (ORCID: https://orcid.org/0000-0002-8953-2235)
- Dijiang Sun
- Xujin Song (ORCID: https://orcid.org/0009-0006-1037-1851)
- Jinfeng Kang
- Shangze Li (ORCID: https://orcid.org/0009-0000-7938-9052)
Institutions
- Peking University (CN)
Publication Details
- Published
- 2025-03-24
- DOI
- https://doi.org/10.1109/cstic64481.2025.11018042
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China