A Model Using Plasma Enhanced Vapor Chemical Deposition of Silicon Nitride Side Walls

In the process of chip manufacturing, the side wall plays an important role in controlling the channel length of CMOS devices and reducing the short channel effect. The side wall of silicon nitride deposited by CVD is usually used as the side wall in the device, which has a blocking effect on most matter atoms, increases the width of the gate and drain LDD region.In this paper, partial differential equation simulation software was used to model the process of CVD deposition of silicon nitride side wall, completing the whole process from plasma modeling to surface deposition, and studying the influence of input process parameters on the morphology of the side wall.